Power noise reduction technique for high density memory with gating

ABSTRACT

Memory devices may have internal circuitry that employs voltages higher than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate, internally, higher voltages for operation. The number of available charge pumps in a memory device may be higher than the number used for certain memory operations. Gating circuitry may be used to selectively enable charge pump cores based on power demands that may be associated with a mode of operation and/or a command.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation and claims priority to U.S. patentapplication Ser. No. 16/163,720, filed Oct. 18, 2018, which is hereinincorporated by reference.

BACKGROUND 1. Field of the Present Disclosure

This disclosure relates to memory devices, and more specifically, tocharge pump supply circuitry in memory devices.

2. Description of Related Art

Memory devices, such as random access memory (RAM) devices, dynamic RAMdevices (DRAMs), static RAM devices (SRAMs), or flash memories, areoften used in electronic systems to provide memory functionality tofacilitate data processing operations and/or facilitate data storageduring data processing operations. To that end, these memory devices mayhave addressable memory elements arranged in memory arrays and/or banks.These memory devices may also include an input/output (I/O) interfacethat provides data access between memory elements and processingcircuitry (e.g., a processor, a microcontroller, a system-on-chip). TheI/O interface of the memory device may be coupled to the memory elementsthrough an internal data path that may include circuitry for reading orwriting data bits in the memory elements.

Several operations in the memory device may employ voltages that may behigher than the power supply voltages of the memory device. For example,certain memory devices may be coupled to a power supply with a voltageof about 1.2V and/or about 2.5V, and may have certain operations thatemploy voltages in a range such as between 4.5V-5V. To perform suchoperations, charge pump power supplies, may be employed to providehigher voltages. More generally, charge pumps may be voltage generatorsthat may provide voltages larger than input voltages. As the current andvoltage demands of memory devices increase with memory density andmemory speed, improvements in the charge pump technology may allowreduced voltage, and thus, more reliable systems.

BRIEF DESCRIPTION OF THE DRAWINGS

Various aspects of this disclosure may be better understood upon readingthe following detailed description and upon reference to the drawings inwhich:

FIG. 1 is a block diagram of a memory device with a configurable numberof enabled charge pumps, in accordance with an embodiment;

FIG. 2 is a block diagram of a programmable charge pump circuit that mayinclude logic for gating charge pump cores, in accordance with anembodiment; and

FIG. 3 is a flow chart illustrating a method for selective gating ofcharge pumps during operation of a memory device, in accordance with anembodiment.

DETAILED DESCRIPTION

One or more specific embodiments will be described below. In an effortto provide a concise description of these embodiments, not all featuresof an actual implementation are described in the specification. It maybe appreciated that in the development of any such actualimplementation, as in any engineering or design project, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which may vary from one implementation toanother. Moreover, it may be appreciated that such a development effortmight be complex and time consuming, but would nevertheless be a routineundertaking of design, fabrication, and manufacture for those ofordinary skill having the benefit of this disclosure.

Many electronic systems may employ memory devices to provide datastorage functionalities and/or facilitate the performance of dataprocessing operations. Several memory devices may store data usingaddressable memory elements (e.g., memory rows or columns), which may bedisposed in memory banks. Examples of addressable memory devices includerandom access memory (RAM) devices, dynamic RAM (DRAM) devices such assynchronous DRAM (SDRAM) devices, double data rate SDRAM devices (e.g.,DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM), and graphics DDR SDRAMdevices (e.g., GDDR3 SDRAM, GDDR4 SDRAM), as well as static RAM (SRAM)devices, and/or flash memory devices, among others.

Processing circuitry in the electronic systems may access (e.g.,read/write) the memory elements by interacting with an input/output(I/O) interface and a command interface. As an example, a processor maystore information by providing a write command and/or an address for amemory element, and read stored information from a particular memoryelement from the memory device by providing a read command and/or anaddress. The commands and/or addresses may be provided via the commandinterface, and the requested information (e.g., data bits) may beretrieved via the I/O interface.

The power to perform memory operations, such as read, write, refresh,activate (e.g., activation of a row or a column), precharge (e.g.,deactivation of a row or a column) operations, may be obtained frompower supply connections (e.g., power supply (V_(DD)), activating powersupply (V_(PP)), ground supply (V_(SS))) with the electronic device. Forexample, the memory device may have external connections (e.g., pins)associated with power supply connections, which may be coupled to pinsin a socket of a printed circuit board (e.g., a motherboard). Thevoltages and tolerances of the power supply connection may be specifiedin a standard for the memory device. For example, DDR4 may include aV_(DD) specification of about 1.2V and a V_(PP) specification of about2.5V. However, certain operations within the memory device may benefitfrom a higher or lower voltage (e.g., higher than 2.5V, lower than 0V).To that end, the memory devices may include analog power supplies, suchas charge pumps and/or charge pump cores, (e.g., charge pumps), whichmay be DC/DC converters that generate higher or lower voltages from thevoltages provided by the power supply lines.

Charge pumps may, in general, generate voltage increases by employing aswitching device (e.g., a transistor) or some of switching to controlsconnections across energy storage devices (e.g., a capacitor). Based on,among other things, the switching frequency, the duty cycle of theswitching signal, and the input voltages, a target output voltage and/orthe current capacity of the charge pump may be adjusted. Operation ofcharge pumps may demand substantial currents during short periods oftime, to charge the energy storage devices. As a result, operation ofcharge pumps may cause interference with other circuitry in the memorydevices. Examples of such interference include voltage drop noise (IRdrop noise), which may be caused by the competition for electrical powerduring due to the large currents used by the charge pump.

Memory devices may include several charge pumps and, conventionally, allcharge pumps are enabled upon request. As the size of memory devicesincreases and the number of on-die memory increases (e.g., 8 Gb, 16 Gb,32 Gb per memory die), the number charge pumps on the die may becomelarge. Due to the impact on the operation of the memory devices,strategies for moderation in the use of charge pumps during operationmay lead to improvements in the performance of the memory device.Embodiments described herein include systems and methods for memorydevices that may allow selective activation of charge pumps and/orcharge pump cores having smaller charge demands, which may be satisfiedwith activation of a subset of charge pumps or charge pump cores. Forexample, refresh operations, which may have the highest charge demand insome memory devices, may activate most or all available charge pumps orcharge pump cores, while read operations, which may have a moderatecharge demand, may activate a fraction of the available charge pumps.The selective activation discussed herein may employ gating circuitrythat may be used to control the driving of pump charges.

With the foregoing in mind, FIG. 1 is a block diagram of a memory device10 in accordance with an embodiment of the present invention. The memorydevice 10 may have one or more memory banks 12, which may include one ormore memory cell arrays 14. Each memory cell array 14 may be coupled toread circuitry, such as one or more read blocks 16 (e.g., sense amplifycircuitry) that may facilitate read operations, and write circuitry,such as write blocks 17 that may facilitate write operations. In someembodiments, a single block may be used to perform part or all of thefunctions performed by the read blocks 16 and the write blocks 17. Readblocks 16 and/or write blocks 17 may operate by amplifying andcoordinating local input/output (I/O) lines coupled to the memory cellarray 14. The memory cell array 14 may also be coupled to subword driver(SWD) blocks 18. The SWD blocks 18 may facilitate read and writeoperations by providing signals to activate memory rows or memorycolumns in the memory cell array 14. Charge pumps 34 may be disposed onthe memory device (e.g., near memory banks 12 in the periphery of thememory device die, etc.) to provide an electrical signal 28 the readblocks 16, write blocks 17, and/or the SWD blocks 18. Moreover, chargepumps 34 may receive one or more electrical power signals 52, (e.g.,V_(DD), V_(PP), V_(SS)).

The logic blocks in the memory banks 12 may be controlled by clockand/or command signals 19, which may be received by a command block 20.Command block 20 may decode the clock and/or command signals 19 togenerate various internal signals to control internal data circuitry,such as address buffers 22, decoders such as row decoder 24 and columndecoder 26, read buffer 30, write buffer 31, charge pumps 34, and/orinput/output (I/O) buffer 32. For example, when an operation demands ahigh voltage signal 54 from the charge pumps 34, the command block 20may provide instructions to activate the charge pumps 34 and provide thehigh voltage signal 54 based on the device power signals 52. In order toaddress data, the address buffer 22 may receive address signal 23. Theclock and/or command signals 19 and the address signal 23 may beprovided by processing circuitry coupled to the memory device, asdiscussed above.

In order to manipulate data at an address, an external device may alsoprovide an address signal 21, in addition to the clock and/or commandsignals 19. The address signal 21 may be decoded in the address buffer22 into a row address 25A and column address 25B. The row address 25Amay be provided to a row decoder 24 and the column address 25B may beprovided to a column decoder 26. The row decoder 24 and the columndecoder 26 may be used to control the appropriate SWD block 18 toactivate the memory cells associated with the requested address signal23.

For example, in a read operation, the memory cells associated with therow address 25A and the column address 25B may be activated by a SWDblock 18, the read block 16 may generate a data read signal, and readbuffer 30 and I/O buffer 32 may amplify and transport the read data toan external device. During a write operation, the memory cellsassociated with the row address 25A and the column address 25B may beactivated by the SWD block 18, the I/O buffer 32 may latch the incomingdata from the external device, and the write buffer 31 and the writeblock 17 may store the read data to an external device. Other operationsmay also be performed, such as refresh operation that refreshes the datain the entire memory device. In the refresh operation, the SWD block 18may activate all rows in the memory cell array 14 to avoid data loss. Inthe processes related with these operations, the charge pumps 34 may beactivated and/or de-activated to provide adequate voltages, as discussedabove.

FIG. 2 illustrates a block diagram 50 of a charge pump 34, which mayenabled or disabled, as discussed herein. The block diagram 50 isprovided to illustrate general functionality of a charge pump 34, and itis understood that the methods and systems described herein may beadjusted and/or applied to other charge pump systems or other similarDC/DC converters. As illustrated, the charge pump 34 may operate as aDC/DC converter that receives one or more input power signals 52 and mayprovide output electrical signals with a higher and/or lower voltage. Tothat end, the charge pump 34 may have pump cores 56A, 56B, 56C, 56D,56E, 56E, and 56F, which may provide output electrical signals 54A, 54B,54C, 54D, 54E, and 54F, and which may include switching circuitry andenergy storage circuitry. The switching circuitry may include, forexample, transistors and/or diodes and the energy storage circuitry mayinclude, for example, capacitors.

Charge pump 34 may also include a pump controller 58 and a pumposcillator 60. The pump oscillator 60 may provide an oscillator signal62 that regulates the operation of the pump cores 56. The frequencyand/or the duty cycle from the signal 62 may be controlled to change thevoltage level and/or the available current of the output electricalsignal 54. The pump controller 58 may be included or be coupled tosensors (e.g., voltage sensors or other feedback circuitry) that monitorthe output electrical signal 54A-F of the pump cores 56A-F and adjustthe operation of the pump oscillator 60 accordingly. For example, if thecurrent demands on the pump cores 56A-F cause a voltage drop in theoutput electrical signal 54A-F, the pump controller 58 may sense thevoltage drop and cause the oscillator 60 to increase its frequency toprovide more charge.

The charge pump 34 may also receive a control signals from a memorydevice controller (e.g., command block 20) to enable, disable, or adjusta mode of the charge pump cores 56. Generally, the control signals maybe used to gate the oscillator signal 62 to produce gated oscillatorsignals. The pump controller 58 may receive the control signals 66A,66B, and/or 66C to selectively gate one or more pump cores 56A-F. Gatingcircuitry, which in the illustrated example include AND gates 70A, 70B,70C, 70D, 70E, and 70F, may be used to gate the oscillator signal 62based on the control signals 66A, 66B, or 66C. Each of the AND gates70A, 70B, 70C, 70D, 70E, and 70F may be associated with a charge pumpcore 56A, 56B, 56C, 56D, 56E, and 56F. The operation of the gatingcircuitry may produce gated oscillator signals such as enable signals68A, 68B, 68C, 68D, 68E, and 68F. As an example, AND gate 70A may gatecharge pump core 56A with signal 66A to produce signal 68A. Similarly,AND gates 70B and 70C may gate charge pump cores 50B and 50C,respectively, with signal 66B, thereby producing signals 68B, and 68C asillustrated. AND gates 70D, 70E, and 70F may gate pump cores 50D, 50E,and 50F with signal 66C, thereby producing signals 68D, 68E, and 68F asillustrated.

The control signals (e.g., control signals 66A-C) may be used to adjustthe number of active charge pump cores. In some embodiments, each chargepump core (e.g., charge pump cores 56A-F) may be controlled byindividual control signals and the number of enabling control signalsmay determine the number of charge pump cores. In some embodiments, eachcontrol signal may control a group of control signals, to reduce thenumber of control signals in the memory die. In the charge pump 34illustrated in FIG. 2, each control signal controls a different numberof charge pump cores. For example, control signal 66A controls onecharge pump, namely charge pump 56A, control signal 66B controls twocharge pumps, namely charge pumps 56B and 56C, and control signal 66Ccontrols three charge pumps, namely charge pumps 56D-F. Thisdistribution may be used to obtain different levels of pump coreactivation with 3 signals.

Control signals 66A, 66B, and 66C may individually be used to enable 1,2, and 3 pump cores, respectively. To enable 4 pumps, control signals66A and 66C may be used. To enable 5 pumps, control signals 66B and 66Dmay be used. To enable all pumps, activation of all control signals maybe used. It should be understood that other coding systems may be usedto control the number charge pump cores activated, and the codingillustrated in FIG. 2 is one example of an implementation. In someembodiments, each activation code may be associated with a mode. Forexample, mode A may be associated with one pump core, and mode B may beassociated with two charge pump cores. More generally, modes may beassociated with a number of activated charge pump cores, the dispositionof activated charge pumps in the memory device, and/or a specificcommand associated with a mode. For example, in some embodiments, a modeA may be associated with a refresh command, mode B may be associatedwith a read command, and mode C may be associated with a write command.Modes may also be associated with a power operation mode (e.g., highperformance mode, energy saving mode, energy conservation mode).

FIG. 3 illustrates a method 100 for selective activation of charge pumpcores, as discussed above. In a process block 102, a command may bereceived by a controller in the memory device (e.g., command block 20).The command may be a memory device operation, such as read instruction,a write instruction, or a refresh instruction. In a process block 102,the controller may determine a charge demand associated with the command(e.g., current demand, voltage demand). The controller may, based on thecharge demand, determine the number of enabled charge pumps and/or whichcharge pumps should be enabled in process block 104. The relationshipbetween the command and the enabled charge pumps may be stored in amemory and/or a logic block within the memory device. In someembodiments, less than 10% of the charge pumps may be used during normaloperations, 40-50% of the charge pumps during heavy access to the memorybanks, and over 90% of the charge pumps during a refresh operation. Asdiscussed above, in some systems, a mode may be selected in a processblock 106. The mode may be associated with the number of core pumpsdetermined in process block 104 or directly associated with the commandreceived in process block 102. In a process block 108, control signals(e.g., control signals 66A-C) may be employed to gate the charge pumpcores, as discussed above. The control signals may fallow an encodingassociated with a mode or associated with the number of cores, asillustrated.

While the embodiments set forth in the present disclosure may besusceptible to various modifications and alternative forms, specificembodiments have been shown by way of example in the drawings and havebeen described in detail herein. However, it may be understood that thedisclosure is not intended to be limited to the particular formsdisclosed. The disclosure is to cover all modifications, equivalents,and alternatives falling within the spirit and scope of the disclosureas defined by the following appended claims.

1. A memory device comprising: a memory controller configured to:receive an instruction associated with a first memory operation of aplurality of memory operations; determine a mode from a set of modes,based on the first memory operation, wherein the mode is associated witha particular memory operation of the plurality of memory operations; andgenerate a set of control signals based on the mode; and a charge pumpcomprising: an oscillator; a set of gates, each gate of the set of gatesconfigured to receive a control signal of the set of control signals andan oscillator signal from the oscillator; and a set of charge pumpcores, each charge pump core configured to receive a gated oscillatorsignal from an associated gate of the set of gates and a first voltage,and to generate a second voltage higher than the first voltage.
 2. Thememory device of claim 1, wherein the first voltage comprises anactivating power supply (V_(PP)), or a power supply (V_(DD)).
 3. Thememory device of claim 1, wherein each gate of the set of gatescomprises an AND gate.
 4. The memory device of claim 1 wherein the modeis associated with a number of charge pump cores to be enabled.
 5. Thememory device of claim 1, wherein the set of control signals comprises afirst control signal that enables a first number of charge pump coresand a second control signal that enables a second number of charge pump.6. The memory device of claim 5, wherein the first control signal isprovided to the first number of gates of the set of gates.
 7. The memorydevice of claim 1, wherein the first memory operation comprises a readoperation, a write operation, or a refresh operation.
 8. A memory devicecomprising: a plurality of memory cells; a controller configured to:receive an instruction for a first memory operation of a plurality ofmemory operations; determine a mode from a set of modes, based on thefirst memory operation, wherein the mode is associated with a particularmemory operation of the plurality of memory operations; and generate acontrol signal based on the mode; first circuitry configured to performthe first memory operation; and a charge pump comprising: a plurality ofcharge pump cores, wherein each charge pump core is configured toreceive a first voltage and to generate a second voltage higher than thefirst voltage, wherein the second voltage is configured to power thefirst circuitry during performance of the first memory operation; andgating circuitry comprising a plurality of logic gates, wherein eachrespective logic gate of the plurality of logic gates is associated witha respective charge pump core of the plurality of charge pump cores andis configured to enable the respective charge pump core or disable therespective charge pump core based on the control signal.
 9. The memorydevice of claim 8, comprising a memory die that comprises the pluralityof memory cells, wherein the memory die comprises 8 Gb, 16 Gb, or 32 Gb.10. The memory device of claim 8, wherein each logic gate of theplurality of logic gates comprises an AND gate.
 11. The memory device ofclaim 8, wherein the control signal gates at least one logic gate of thegating circuitry.
 12. The memory device of claim 11 wherein the controlsignal is configured to gate a subplurality of logic gates of the gatingcircuitry.
 13. The memory device of claim 11, wherein the controller isconfigured to determine a number of pump cores and generates the controlsignal based on the number of pump cores.
 14. The memory device of claim8, wherein the plurality of memory operations comprises a readoperation, a write operation, or a refresh operation.
 15. The memorydevice of claim 8, wherein the first voltage comprises an activatingpower supply (V_(PP)), or a power supply (V_(DD)).
 16. A method forcontrolling charge pump circuitry of a memory device, comprising:receiving, in a controller, a command for a memory operation of a set ofoperations; determining, in the controller, a mode of a set of modesbased in part on the memory operation, wherein the mode is associatedwith a particular memory operation of the set of operations; andproviding a control signal from the controller to gating circuitry ofthe charge pump circuitry, wherein the control signal is based on themode, wherein the gating circuitry is configured to gate an oscillatorsignal from an oscillator to a charge pump core of the charge pumpcircuitry, wherein the gating circuitry comprises a plurality of ANDgates, and each AND gate of the plurality of AND gates is associatedwith a respective charge pump core of the charge pump circuitry.
 17. Themethod of claim 16, comprising determining a number of charge pump coresto enable based on the mode.
 18. The method of claim 16, wherein the setof modes comprises a performance mode or an energy conservation mode.19. The method of claim 16, wherein the set of operations comprise aread operation, a write operation, or a refresh operation. 20.(canceled)